0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1.gate 2.soruce 3.drain 2n700 0 features high den sit y cell design for low r ds(on) voltage c ontrolled sm all s ignal switch rugg ed and reliab le high saturation current c apab ility absolute maxim um ratings t a = 25 sym bol rating unit v ds 60 v v gs 20 v 200 500 p d 0.4 w t j , t stg -55 to +150 notes: 1. p ulse wid th lim ited by m ax im um junct ion tem pera ture. i d m a pow er dissi pation @ t a = 25 oper ating and storage junction t em pera ture rang e paramet er gate-sour ce v oltage dra in-source vo ltage dra in curr ent - continuous - pulsed note(1) el ectrical character istics t a = 2 5 paramet er sym bol min typ ma x unit dra in-source bre akdow n voltage v (br)dss 60 gate-thre shold voltage v gs(th) 0.8 2.1 3 gate-bo dy leakage l gss 100 na 1 a t c = 125 1000 a on-state drain curren t i d(on) 0.35 0.075 a 5 5.3 forw ard tran condu ct ance g ts 100 m s input c apacitance c i ss 22 60 output capacit ance c oss 11 25 rev erse transfer c apacitance c rss 2 5 turn- on tim e t d(on ) 10 ns turn- off tim e t d(of f) 10 ns zero gate vo ltage drain curre nt v gs =4.5 v, i d =75 m a v gs =10 v, i d =500 m a dra in-source on- resist ance r ds(on) i d =0.5 a , v gen = 10 v , r g = 25 v dd = 15 v , r l = 25 i dss v ds =0 v, v gs = 20 v test c onditons v gs =0 v, i d =10 a v ds =v gs , i d =1m a v ds =48 v, v gs =0 v pf v ds =25 v, v gs =0 v, f=1 mhz v gs =4.5 v, v ds =10 v v v ds =10 v, i d =200 m a mark ing mar king 702 product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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